Patrick Soukiassian - (Paris-South University, Oray)
Silicon carbide (SiC) is a wide band gap IV-IV compound semiconductor having a strong interest in advanced electronic device/sensor applications, in nanotechnology and as a biocompatible material. Graphene is a single atomic layer of graphite that could be grown epitaxially on SiC, exhibiting unsurpassed transport properties and mechanical resistance. Cubic and hexagonal SiC and graphene surfaces are investigated by i) atom-resolved scanning tunneling microscopy and spectroscopy - STM-STS (electrons/photons)ii) synchrotron radiation-based core level/valence band photoemission spectroscopy, iii) grazing incidence x-ray diffraction, iv) infrared absorption spectroscopy, and v) low energy electron microscopy (LEEM). Strain is the leading driving force in surface organization and properties, and nanostructures self-formation.
Among some of the results, the following ones will be presented and discussed:
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